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つくばリポジトリ (Tulips-R) >
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Applied physics letters >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/2241/88448
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| Title: | Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors |
| Authors: | Sano, Nobuyuki
Tomizawa, Masaaki
佐野, 伸行 |
| Issue Date: | Oct-2001 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied physics letters |
| Volume: | 79 |
| Issue: | 14 |
| Start Page: | 2267 |
| End Page: | 2269 |
| DOI: | 10.1063/1.1406980 |
| Abstract: | We investigate the dopant model employed in drift-diffusion device simulations for the study of statistical threshold voltage variations associated with discrete random dopants. It is pointed out that the conventional dopant model, when extended to the extreme "atomistic" regime, becomes physically inconsistent with the length-scale presumed in drift-diffusion simulations. Splitting the Coulomb potential of localized dopants between the long-range and short-range parts, we propose a dopant model appropriate for three-dimensional drift-diffusion simulations. |
| URI: | http://hdl.handle.net/2241/88448 |
| Rights: | © 2001 American Institute of Physics |
| Text Version: | publisher |
| Appears in Collections: | Applied physics letters
佐野 伸行 (Sano Nobuyuki)
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