Impact of the Coulomb interaction on nano-scale silicon device characteristics

Please use this identifier to cite or link to this item: http://hdl.handle.net/2241/116755

Title:	Impact of the Coulomb interaction on nano-scale silicon device characteristics
Authors:	Sano, Nobuyuki 佐野, 伸行
Issue Date:	Jun-2011
Publisher:	Springer Science
Journal Title:	Journal of computational electronics
Volume:	10
Issue:	1-2
Start Page:	98
End Page:	103
DOI:	10.1007/s10825-010-0327-6
Abstract:	Monte Carlo simulations coupled self-consistently with the three-dimensional Poisson equation are carried out under the double-gate MOSFET structures. The Coulomb force experienced by an electron inside the device is directly evaluated by performing the Monte Carlo simulations with or without the full Coulomb interaction and the Coulomb force on the channel electron corresponding to plasmon excitations is clarified. It is pointed out that the consistency of the boundary condition is achieved only if the long-range Coulomb interaction is properly taken into account, and this is crucial for predicting reliable device characteristics in ultra-small devices. The drain current and transconductance are greatly reduced if the self-consistent potential fluctuations are taken into account.
URI:	http://hdl.handle.net/2241/116755
Rights:	© Springer Science+Business Media LLC 2010 The original publication is available at www.springerlink.com
Text Version:	author
Appears in Collections:	佐野伸行 (Sano Nobuyuki) Journal of computational electronics

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