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つくばリポジトリ (Tulips-R) >
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Physical review B >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/2241/102048
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| Title: | Electronic properties of a carbon nanotube in a field-effect transistor structure: A first-principles study |
| Authors: | Uchida, Kazuyuki
Okada, Susumu
岡田, 晋 |
| Issue Date: | Feb-2009 |
| Publisher: | The American Physical Society |
| Journal Title: | Physical review B |
| Volume: | 79 |
| Issue: | 08 |
| Start Page: | 085402 |
| DOI: | 10.1103/PhysRevB.79.085402 |
| Abstract: | A first-principles electron-state calculation is performed to explore the electronic properties of a semiconductor carbon nanotube (CNT) in a field-effect transistor structure. Field-effect electron/hole doping results in a carrier distribution spread over the whole C-C network of the CNT, while accumulated charges, that explain the electrostatic capacitance C0 between the CNT and gate electrode, are concentrated in a small part of the CNT facing the gate electrode. We also demonstrate that the density of states structure of the CNT gives substantial bias dependences to the total capacitance C of the system. |
| URI: | http://hdl.handle.net/2241/102048 |
| Rights: | ©2009 The American Physical Society |
| Text Version: | publisher |
| Appears in Collections: | Physical review B
岡田 晋 (Okada Susumu)
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