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つくばリポジトリ (Tulips-R) >
Browsing by Author "Sano, Nobuyuki"
Showing results 1 to 11 of 11
| Issue Date | Title | Author(s) | | Sep-1996 | Drift-velocity degradation caused by an electric field during collision in one-dimensional quantum wires | Sano, Nobuyuki; Natori, Kenji; 佐野, 伸行 |
| Jun-2011 | Impact of the Coulomb interaction on nano-scale silicon device characteristics | Sano, Nobuyuki; 佐野, 伸行 |
| Dec-2004 | Kinetics of Quasiballistic Transport in Nanoscale Semiconductor Structures: Is the Ballistic Limit Attainable at Room Temperature? | Sano, Nobuyuki; 佐野, 伸行 |
| Oct-2004 | Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy | Takeuchi, Osamu; Aoyama, Masahiro; Oshima, Ryuji; Okada, Yoshitaka; Oigawa, Haruhiro; Sano, Nobuyuki; Shigekawa, Hidemi; Morita, Ryuji; Yamashita, Mikio; 武内, 修; 大井川, 治宏; 佐野, 伸行; 重川, 秀実 |
| Oct-2001 | Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors | Sano, Nobuyuki; Tomizawa, Masaaki; 佐野, 伸行 |
| May-1998 | Scaling limit of digital circuits due to thermal noise | Natori, Kenji; Sano, Nobuyuki; 名取, 研二 |
| Sep-2010 | Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics | Yoshida, Katsuhisa; Okada, Yoshitaka; Sano, Nobuyuki; 佐野, 伸行 |
| Aug-1998 | Thickness dependence of the effective dielectric constant in a thin film capacitor | Natori, Kenji; Otani, Daijiro; Sano, Nobuyuki; 名取, 研二 |
| 2012 | ナノスケール素子における長距離クーロン相互作用のシミュレーションによる研究 | 佐野, 伸行; SANO, NOBUYUKI; サノ, ノブユキ |
| 2001 | 極微細半導体素子での基板電流ゆらぎに伴う素子寿命不確定性抑制の研究 | 佐野, 伸行; Sano, Nobuyuki; サノ, ノブユキ |
| 2004 | 極微細半導体素子のしきい値電圧ばらつき解析のための離散不純物モデルの構築 | 佐野, 伸行; Sano, Nobuyuki; サノ, ノブユキ |
Showing results 1 to 11 of 11
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