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つくばリポジトリ (Tulips-R) >
Browsing by Author "Natori, Kenji"
Showing results 1 to 16 of 16
| Issue Date | Title | Author(s) | | Oct-1994 | Ballistic metal-oxide-semiconductor field effect transistor | Natori, Kenji; 名取, 研二 |
| Nov-2002 | Ballistic MOSFET reproduces current-voltage characteristics of an experimental device | Natori, Kenji; 名取, 研二 |
| Jul-2008 | Ballistic/quasi-ballistic transport in nanoscale transistor | Natori, Kenji; 名取, 研二 |
| Oct-1995 | The capacitance of microstructures | Natori, Kenji; 名取, 研二 |
| Feb-2005 | Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor | Natori, Kenji; Kimura, Yoji; Shimizu, Tomo; 名取, 研二 |
| Nov-2008 | Compact Modeling of Ballistic Nanowire MOSFETs | Natori, Kenji; 名取, 研二 |
| Sep-1996 | Drift-velocity degradation caused by an electric field during collision in one-dimensional quantum wires | Sano, Nobuyuki; Natori, Kenji; 佐野, 伸行 |
| Nov-2011 | Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure | Sato, Soshi; Kakushima, Kuniyuki; Ahmet, Parhat; Ohmori, Kenji; Natori, Kenji; Yamada, Keisaku; Iwai, Hiroshi; 大毛利, 健治; 山田, 啓作 |
| 2011 | Electrical characteristics of asymmetrical silicon nanowire field-effect transistors | Sato, Soshi; Kakushima, Kuniyuki; Ohmori, Kenji; Natori, Kenji; Yamada, Keisaku; Iwai, Hiroshi; 山田, 啓作; 大毛利, 健治 |
| Jun-2011 | Extraction of additional interfacial states of silicon nanowire field-effect transistors | Sato, Soshi; Li, Wei; Kakushima, Kuniyuki; Ohmori, Kenji; Natori, Kenji; Yamada, Keisaku; Iwai, Hiroshi; 大毛利, 健治 |
| Mar-2009 | New Solution to High-Field Transport in Semiconductors: I. Elastic Scattering without Energy Relaxation | Natori, Kenji; 名取, 研二 |
| Mar-2009 | New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission | Natori, Kenji; 名取, 研二 |
| May-1998 | Scaling limit of digital circuits due to thermal noise | Natori, Kenji; Sano, Nobuyuki; 名取, 研二 |
| May-2011 | Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors | Sato, Soshi; Kakushima, Kuniyuki; Ahmet, Parhat; Ohmori, Kenji; Natori, Kenji; Yamada, Keisaku; Iwai, Hiroshi; 大毛利, 健治; 山田, 啓作 |
| Aug-1998 | Thickness dependence of the effective dielectric constant in a thin film capacitor | Natori, Kenji; Otani, Daijiro; Sano, Nobuyuki; 名取, 研二 |
| 1999 | 量子ドットを介した共鳴トンネル型電子輸送と新デバイス応用 | 名取, 研二; Natori, Kenji; ナトリ, ケンジ |
Showing results 1 to 16 of 16
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