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つくばリポジトリ (Tulips-R) >
Browsing by Author "佐野, 伸行"
Showing results 1 to 13 of 13
| Issue Date | Title | Author(s) | | Sep-1996 | Drift-velocity degradation caused by an electric field during collision in one-dimensional quantum wires | Sano, Nobuyuki; Natori, Kenji; 佐野, 伸行 |
| Aug-2004 | Impact ionization coefficients of 4H silicon carbide | Hatakeyama, T.; Watanabe, T.; Shinohe, T.; Kojima, K.; Arai, K.; Sano, N.; 佐野, 伸行 |
| Jun-2011 | Impact of the Coulomb interaction on nano-scale silicon device characteristics | Sano, Nobuyuki; 佐野, 伸行 |
| Nov-2004 | Kinetic study of velocity distributions in nanoscale semiconductor devices under room-temperature operation | Sano, N.; 佐野, 伸行 |
| Dec-2004 | Kinetics of Quasiballistic Transport in Nanoscale Semiconductor Structures: Is the Ballistic Limit Attainable at Room Temperature? | Sano, Nobuyuki; 佐野, 伸行 |
| Oct-2004 | Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy | Takeuchi, Osamu; Aoyama, Masahiro; Oshima, Ryuji; Okada, Yoshitaka; Oigawa, Haruhiro; Sano, Nobuyuki; Shigekawa, Hidemi; Morita, Ryuji; Yamashita, Mikio; 武内, 修; 大井川, 治宏; 佐野, 伸行; 重川, 秀実 |
| Oct-2001 | Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors | Sano, Nobuyuki; Tomizawa, Masaaki; 佐野, 伸行 |
| Sep-2010 | Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics | Yoshida, Katsuhisa; Okada, Yoshitaka; Sano, Nobuyuki; 佐野, 伸行 |
| 2009 | ナノスケール素子における高濃度電子輸送の３次元粒子シミュレーションによる研究 | 佐野, 伸行; サノ, ノブユキ |
| 2012 | ナノスケール素子における長距離クーロン相互作用のシミュレーションによる研究 | 佐野, 伸行; SANO, NOBUYUKI; サノ, ノブユキ |
| 2001 | 極微細半導体素子での基板電流ゆらぎに伴う素子寿命不確定性抑制の研究 | 佐野, 伸行; Sano, Nobuyuki; サノ, ノブユキ |
| 2004 | 極微細半導体素子のしきい値電圧ばらつき解析のための離散不純物モデルの構築 | 佐野, 伸行; Sano, Nobuyuki; サノ, ノブユキ |
| 2010 | 微視的揺らぎと少数電子系の輸送機構 | 佐野, 伸行; サノ, ノブユキ |
Showing results 1 to 13 of 13
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